GA100TS120U Vishay, GA100TS120U Datasheet - Page 5

• Manufacturer Part Number: GA100TS120U
• Description: IGBT FAST 1200V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 18.672nF @ 30V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Supplier Unconfirmed

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Fig. 9 - Typical Switching Losses vs. Gate
35000
28000
21000
14000
7000
60
50
40
30
0
10
Fig. 7 - Typical Capacitance vs.
V
V
T
1
I
J
C
CC
GE
Collector-to-Emitter Voltage
= 125 C
= 720V
= 15V
= 100A
V
R
CE
G
20
V
C
C
C
°
, Collector-to-Emitter Voltage (V)
, Gate Resistance (Ohm)
Resistance
GE
ies
res
oes
C
C
C
oes
ies
res
=
=
=
=
0V,
C
C
C
ge
gc
ce
30
+ C
+ C
10
f = 1MHz
gc ,
gc
C
ce
40
SHORTED
100
50
1000
100
20
16
12
10
8
4
0
1
-60 -40 -20
0
Fig. 10 - Typical Switching Losses vs.
V
R
R
V
V
I
CC
C
GE
CC
G
G1
Fig. 8 - Typical Gate Charge vs.
=15 ;R
= 400V
= 113A
= 15V
= 720V
= Ohm
T , Junction Temperature ( C )
Q , Total Gate Charge (nC)
Gate-to-Emitter Voltage
J
Junction Temperature
G
G2
0
300
= 0
20 40
GA100TS120U
60
80 100 120 140 160
600
I =
I =
I =
C
C
C
°
200
100
50
A
A
A
900
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