GA100TS120U Vishay, GA100TS120U Datasheet - Page 8

• Manufacturer Part Number: GA100TS120U
• Description: IGBT FAST 1200V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 18.672nF @ 30V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Supplier Unconfirmed

GA100TS120U
Fig. 17c -
I
8
LM
Fig. 17a -
V c c
, E
td(on)
10% + V g
10% Ic
on
, E
Test Waveforms for Circuit of Fig. 18a,
off(diode)
t1
Test Circuit for Measurement of
Defining E
V c e
tr
, t
rr
, Q
5% V c e
90% Ic
on
rr
, I
, t
G A T E V O LT A G E D .U .T .
rr
+V g
d(on)
, t
d(on)
, t
r
, t
t2
E on =
D U T V O LT A G E
A N D C U R R E N T
Ipk
r
, t
d(off)
t1
V c e ie dt
Vce Ic dt
t2
Ic
, t
f
Fig. 17b -
Fig. 17d -
+V ge
Ic
Test Waveforms for Circuit of Fig. 18a, Defining
V pk
td (off)
D IO D E R E V E R S E
R E C O V E R Y E N E R G Y
Ic
10% V ce
10% V c c
tx
Test Waveforms for Circuit of Fig. 18a,
Defining E
t1
Irr
E
off
, t
V ce
t3
d(off)
90% V ge
Ic
trr
rec
, t
tf
, t
f
rr
, Q
t2
90% Ic
D IO D E R E C O V E R Y
W A V E F O R M S
t4
rr
E rec =
, I
E off =
10% Irr
rr
www.irf.com
5% Ic
Q rr =
t3
V d id dt
Vd Ic dt
t4
t1
Vce Ic dt
V ce ic dt
tx
t1+5µ S
id dt
Ic dt
trr
V c c