GA125TS120U Vishay, GA125TS120U Datasheet - Page 3

• Manufacturer Part Number: GA125TS120U
• Description: IGBT FAST 1200V 125A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA125TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 125A
• Current - Collector (ic) (max): 125A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 22.258nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 125A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

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1000
100
10
120
100
80
60
40
20
1.0
0
Fig. 2 - Typical Output Characteristics
0.1
S q u a re w a v e :
V
CE
1.5
, Collector-to-Emitter Voltage (V)
T = 125 C
60 % of ra ted
J
Id e a l d io d e s
I
vo ltag e
°
2.0
T = 25 C
J
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
GE
°
= 15V
(Load Current = I
2.5
1
3.0
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
4.0
V
GE
T = 125 C
10
J
5.0
, Gate-to-Emitter Voltage (V)
GA125TS120U
°
For both:
D uty cy cle: 50%
T = 125°C
T
G ate drive as specified
P ow e r Dis sip ation =
J
s ink
= 90°C
6.0
V
80µs PULSE WIDTH
T = 25 C
CE
J
= 25V
120
7.0
°
W
3
100
8.0