GA125TS120U Vishay, GA125TS120U Datasheet - Page 6

• Manufacturer Part Number: GA125TS120U
• Description: IGBT FAST 1200V 125A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA125TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 125A
• Current - Collector (ic) (max): 125A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 22.258nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 125A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

GA125TS120U
6
120
100
1 0 0 0
Fig. 13 - Typical Forward Voltage Drop vs.
80
60
40
20
1 0 0
Fig. 11 - Typical Switching Losses vs.
0
1 0
0
1.0
R
T
V
V
R
CC
GE
G
J
G1
F o rw a rd V o lta g e D ro p - V
Instantaneous Forward Current
Collector-to-Emitter Current
=15 ;R
= 125 C
= 720V
= 15V
= Ohm
50
1.5
I
°
C
G2
, Collector Current (A)
100
2.0
= 0
150
2.5
T = 125 °C
T = 25°C
J
J
200
3.0
F M
(V )
3.5
250
300
Fig. 14 - Typical Stored Charge vs. di
2 0 0 0 0
1 6 0 0 0
1 2 0 0 0
3 5 0
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
8 0 0 0
4 0 0 0
5 0
0
0
0
5 0 0
V
T
V
G E
J
CE
V
Fig. 12 - Reverse Bias SOA
V = 7 2 0V
T = 1 25 °C
T = 2 5°C
C E
R
J
J
I = 1 25 A
I = 6 2.5A
= 2 0V
= 1 25 °C
I = 25 0A
m e a su re d a t te rm in a l ( P e a k V oltag e )
2 0 0
F
F
F
, C ollector-to -Em itter Voltage (V)
S AFE O P E RA TIN G A R E A
4 0 0
1 0 0 0
d i /d t - (A /µ s)
6 0 0
f
8 0 0
1 5 0 0
www.irf.com
1 0 0 0
1 2 0 0
f
/dt
2 0 0 0
1 4 0 0
A