GA125TS120U Vishay, GA125TS120U Datasheet - Page 4

• Manufacturer Part Number: GA125TS120U
• Description: IGBT FAST 1200V 125A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA125TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 125A
• Current - Collector (ic) (max): 125A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 22.258nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 125A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

GA125TS120U
Fig. 4 - Maximum Collector Current vs. Case
4
150
125
100
75
50
25
0 . 0 1
0.1
0
0 . 0 0 0 1
25
1
D = 0.50
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
0.20
0 .1 0
0 .0 5
0.02
0 .0 1
C
Temperature
0 . 0 0 1
75
(TH E R M AL RE SP O N SE )
S IN G LE PU LS E
100
0 . 0 1
°
125
t , R ecta ngu la r Pulse D u ration (se c)
1
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
1
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t
2. Peak T = P
T , Junction Temperature ( C)
J
0
1 0
20
J
DM
40
x Z
60
1
/ t
thJC
2
P
80 100 120 140 160
DM
1 0 0
+ T
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I =
I =
I =
C
C
C
C
t
62.5
1
250
125
t 2
°
A
A
A
1 0 0 0
A