HGT1N30N60A4D Fairchild Semiconductor, HGT1N30N60A4D Datasheet
HGT1N30N60A4D
Specifications of HGT1N30N60A4D
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HGT1N30N60A4D Summary of contents
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... Data Sheet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... 20V - 300 150 - 38 - 280 - 600 - 240 o = 125 180 - 58 - 280 - 1000 - 450 - 2.2 UNITS N-m N-m MAX UNITS - V µ A 250 2.8 mA 2.7 V 2.0 V 7.0 V ± 250 270 nC 360 µ µ µ J 350 - 200 µ µ J 1200 µ J 750 2.5 V HGT1N30N60A4D Rev. B ...
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... V , COLLECTOR TO EMITTER VOLTAGE ( Ω 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS 0.49 C/W o 2.0 C/W ON2 500 600 700 900 800 700 SC 600 500 400 300 200 14 15 HGT1N30N60A4D Rev. B ...
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... G CE 1200 1000 800 125 12V OR 15V J GE 600 400 200 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 100 R = 3Ω 200µ 390V 125 15V 12V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 2.0 2.5 = 12V OR 15V 12V 15V HGT1N30N60A4D Rev. B ...
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... COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA 15Ω G(REF 600V 400V CE 7 200V CE 5.0 2 100 150 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 200µ 390V TOTAL ON2 OFF 60A 30A GATE RESISTANCE (Ω 200 250 = 15V I = 15A CE 100 300 HGT1N30N60A4D Rev. B ...
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... EC 90 125 125 125 FORWARD CURRENT (A) EC 1400 V = 390V CE 1200 o 125 40A F 1000 800 600 400 200 0 200 400 600 di /dt, RATE OF CHANGE OF CURRENT (A/µs) EC CURRENT = 15V 60A 30A 15A 125 20A 40A 20A F 800 1000 HGT1N30N60A4D Rev. B ...
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... G HGT1N30N60A4D FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued) DUTY FACTOR PEAK RECTANGULAR PULSE DURATION (s) 1 HGT1N30N60A4D DIODE TA49373 390V θJC θ 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGT1N30N60A4D Rev ...
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... P )/( MAX2 D C OFF ON2 ) is defined 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the instantaneous ON2 during turn-on and OFF HGT1N30N60A4D Rev d(OFF)I ). The - T )/R . θ the ) during CE = 0). ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...