HGT1N30N60A4D Fairchild Semiconductor, HGT1N30N60A4D Datasheet - Page 7

• Manufacturer Part Number: HGT1N30N60A4D
• Description: IGBT SMPS N-CHAN 600V SOT-227
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1N30N60A4D

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 96A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 255W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
10
-1
-2
0
R
10
G
HGT1N30N60A4D
-5
0.50
0.20
0.10
0.05
0.02
0.01
= 3Ω
SINGLE PULSE
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
-4
L = 200µH
HGT1N30N60A4D
+
-
Unless Otherwise Specified (Continued)
DIODE TA49373
V
DD
10
-3
= 390V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
V
V
I
CE
GE
CE
DUTY FACTOR, D = t
PEAK T
FIGURE 25. SWITCHING TEST WAVEFORMS
J
= (P
D
t
10
d(OFF)I
X Z
90%
-1
θJC
10%
1
/ t
X R
2
t
fI
θJC
) + T
E
OFF
90%
C
10
P
0
D
E
ON2
10%
t
1
t
d(ON)I
t
HGT1N30N60A4D Rev. B
2
t
rI
10
1