HGT1N30N60A4D Fairchild Semiconductor, HGT1N30N60A4D Datasheet - Page 8

• Manufacturer Part Number: HGT1N30N60A4D
• Description: IGBT SMPS N-CHAN 600V SOT-227
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1N30N60A4D

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 96A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 255W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

©2001 Fairchild Semiconductor Corporation
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
circuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
GEM
. Exceeding the rated V
GE
can result in
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P
E
shown in Figure 25. E
power loss (I
integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
E
MAX2
MAX1
C
ON2
OFF
= (V
; i.e., the collector current equals zero (I
and E
is defined by f
is defined by f
CE
x I
OFF
CE
D
d(OFF)I
CE
MAX1
. A 50% duty factor was used (Figure 3) and
x V
)/2.
are defined in the switching waveforms
CE
MAX2
MAX1
or f
ON2
and t
) during turn-on and E
D
) is defined by P
MAX2
C
= (P
is the integral of the instantaneous
d(ON)I
) are approximated by
= 0.05/(t
; whichever is smaller at each
D
CE
- P
are defined in Figure 25.
) plots are possible using
C
d(OFF)I
)/(E
D
OFF
= (T
CE
+ t
HGT1N30N60A4D Rev. B
+ E
OFF
d(ON)I
CE
JM
x V
JM
ON2
CE
- T
= 0).
is the
. t
C
).
) during
). The
d(OFF)I
)/R
θJC
.