APTGT50DH60TG Microsemi Power Products Group, APTGT50DH60TG Datasheet
APTGT50DH60TG
Specifications of APTGT50DH60TG
Related parts for APTGT50DH60TG
APTGT50DH60TG Summary of contents
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... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT50DH60TG V ® CES I = 50A @ Tc = 80°C C Application • Welding converters • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT50DH60TG = 25°C unless otherwise specified j Test Conditions Min 600V 25°C V =15V 50A T = 150°C ...
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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT50DH60TG R T: Thermistor temperature 25 Thermistor value at T ...
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... T = 150° 1.5 1 0.5 Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTGT50DH60TG =15V) GE 100 =150° 2 Energy losses vs Collector Current 3 2 150°C ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT50DH60TG Forward Characteristic of diode 100 ...