APTGT50DH60TG Microsemi Power Products Group, APTGT50DH60TG Datasheet - Page 3

• Manufacturer Part Number: APTGT50DH60TG
• Description: IGBT MOD TRENCH ASYM BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50DH60TG

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.15nF @ 25V
• Power - Max: 176W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Temperature sensor NTC
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
SP4 Package outline
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
Torque
B
V
R
T
R
T
Wt
T
ISOL
25/85
STG
thJC
25
C
J
Resistance @ 25°C
T
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
25
= 298.15 K
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).



B
25
/
85
R

 

25
T
1
25
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
−
T
1

 




www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
APTGT50DH60TG
Diode
IGBT
M5
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
Max
0.85
1.42
175
125
100
160
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 - 5