APTGT50DH60TG Microsemi Power Products Group, APTGT50DH60TG Datasheet - Page 5

• Manufacturer Part Number: APTGT50DH60TG
• Description: IGBT MOD TRENCH ASYM BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50DH60TG

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.15nF @ 25V
• Power - Max: 176W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.6
1.4
1.2
0.8
0.6
0.4
0.2
120
100
0.00001
80
60
40
20
1
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.1
0.9
0.7
switching
0.05
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
20
0.0001
ZCS
I
C
40
(A)
V
D=50%
R
T
T
60
CE
G
J
c
=150°C
=85°C
=8.2Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
Single Pulse
Diode
www.microsemi.com
80
0.01
100
80
60
40
20
0
APTGT50DH60TG
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5