APTM50HM65FT3G Microsemi Power Products Group, APTM50HM65FT3G Datasheet - Page 4

• Manufacturer Part Number: APTM50HM65FT3G
• Description: MOSFET MOD FULL BRIDGE 500V SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50HM65FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.05
0.95
200
160
120
0.35
0.25
0.15
0.05
1.1
0.9
80
40
0.3
0.2
0.1
0.00001
1
0
0
0
0
Normalized to
V
Low Voltage Output Characteristics
0.05
V
GS
0.9
0.7
V
0.3
0.5
0.1
GS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=10V @ 25.5A
DS
10
=10&15V
R
, Drain to Source Voltage (V)
5
DS
I
(on) vs Drain Current
D
, Drain Current (A)
20
0.0001
10
30
15
V
V
8V
5.5V
40
GS
GS
=10V
=20V
20
0.001
rectangular Pulse Duration (Seconds)
50
7V
6.5V
www.microsemi.com
6V
5V
Single Pulse
25
60
0.01
APTM50HM65FT3G
150
125
100
75
50
25
60
50
40
30
20
10
0
0
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
0.1
DS
V
GS
Transfert Characteristics
> I
T
, Gate to Source Voltage (V)
50
D
C
(on)xR
, Case Temperature (°C)
2
T
J
DS
=125°C
75
(on)MAX
T
J
=25°C
4
1
100
6
T
125
J
=-55°C
10
150
8
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