APTM50HM65FT3G Microsemi Power Products Group, APTM50HM65FT3G Datasheet - Page 5

• Manufacturer Part Number: APTM50HM65FT3G
• Description: MOSFET MOD FULL BRIDGE 500V SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50HM65FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
10
-50 -25
-50 -25
Capacitance vs Drain to Source Voltage
Threshold Voltage vs Temperature
0
V
Breakdown Voltage vs Temperature
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
C
10
, Case Temperature (°C)
0
0
25
25
20
50 75 100 125 150
50
30
75 100 125 150
40
Coss
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Ciss
Crss
50
1000
APTM50HM65FT3G
100
0.1
10
14
12
10
1
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
1
0
-50 -25
limited by R
I
T
D
J
V
=51A
=25°C
Single pulse
T
T
25
DS
ON resistance vs Temperature
V
I
J
C
D
T
Maximum Safe Operating Area
=150°C
GS
= 25.5A
=25°C
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
=10V
DSon
50
Gate Charge (nC)
0
10
25
75
V
50 75 100 125 150
DS
100 125 150 175
=250V
100
V
DS
=100V
V
DS
100 us
100 ms
10 ms
=400V
1 ms
1000
5 – 6