APTM50HM65FT3G Microsemi Power Products Group, APTM50HM65FT3G Datasheet - Page 6

• Manufacturer Part Number: APTM50HM65FT3G
• Description: MOSFET MOD FULL BRIDGE 500V SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50HM65FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
2.5
1.5
0.5
450
400
350
300
250
200
150
100
80
70
60
50
40
30
20
10
50
3
2
1
0
0
10
10
10
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
J
DS
J
G
DS
G
=125°C
=125°C
20
=3Ω
20
=3Ω
Switching Energy vs Current
=333V
=333V
15
Delay Times vs Current
I
D
I
I
30
switching
D
30
, Drain Current (A)
D
20
, Drain Current (A)
, Drain Current (A)
hard
40
40
25
ZCS
ZVS
50
50
30
60
60
35
E
V
D=50%
R
T
T
td(off)
on
td(on)
E
J
C
DS
G
=125°C
off
=75°C
=3Ω
=333V
70
70
40
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80
80
45
1000
APTM50HM65FT3G
100
160
140
120
100
10
80
60
40
20
1
0
5
4
3
2
1
0
Source to Drain Diode Forward Voltage
0.2
10
Switching Energy vs Gate Resistance
0
V
R
T
L=100µH
V
I
T
L=100µH
D
DS
J
J
G
DS
=51A
V
=125°C
=125°C
=3Ω
5
0.4
Rise and Fall times vs Current
=333V
20
=333V
SD
T
J
, Source to Drain Voltage (V)
=150°C
Gate Resistance (Ohms)
10 15 20 25 30 35 40 45
E
I
off
0.6
D
30
, Drain Current (A)
0.8
40
T
J
=25°C
50
1
1.2
60
t
E
t
f
r
E
off
1.4
on
70
1.6
80
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