IXFN80N50Q2 IXYS, IXFN80N50Q2 Datasheet
IXFN80N50Q2
Specifications of IXFN80N50Q2
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IXFN80N50Q2 Summary of contents
Page 1
... ± GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFN 80N50 Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 80 320 ≤ DSS 780 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. ...
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... Pulse test, t < 300 ms, duty cycle d < 30A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 50 70 ...
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... J 1.2 1.0 0 Amperes D Fig. 3. Normalized R DS(on) 100 -50 - 100 125 150 T - Degrees C C Fig. 5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 100 Fig. 2. High Temperature Output Characteristics 2.8 2.5 2.2 1.9 1.6 1.3 1 vs. Drain Current IXFN80N50 - PG 1 IXFN 80N50 ...
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... V - Volts SD Fig. 9. Source-to-Drain Voltage Drop 1.000 0.100 0.010 0.001 Fig.10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. 30000 10000 Fig. 8 Capacitance Curves 1.0 1 Pulse Width - Seconds IXFN 80N50 Ciss Coss 1000 ...