IXFN80N50Q2 IXYS, IXFN80N50Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFN80N50Q2
• Description: MOSFET N-CH 500V 80A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN80N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 12800pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 12800
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 890
• Rthjc, Max, (ºc/w): 0.14
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100
10
Fig. 7 Gate Charge Characteristic Curve
80
60
40
20
8
6
4
2
0
1.000
0.100
0.010
0.001
0
0.2
0
Fig. 9. Source-to-Drain Voltage Drop
Fig.10. Transient Thermal Resistance
10
50
-4
V
V
DS
I
I
GS
D
G
0.4
= 250 V
= 40 A
= 10 mA
= 0V
100 150 200 250 300 350 400
Gate Charge - nC
T
J
0.6
V
= 125
SD
- Volts
O
C
10
0.8
-3
T
J
= 25
1.0
O
C
1.2
10
Pulse Width - Seconds
-2
10000
Fig. 8 Capacitance Curves
30000
1000
100
0
10
-1
5
Ciss
10
Coss
15
V
DS
- Volts
20
Crss
10
25
0
IXFN 80N50
Single Pulse
30
f = 100kHz
35
40
10
1