IXFN80N50Q2 IXYS, IXFN80N50Q2 Datasheet - Page 3

• Manufacturer Part Number: IXFN80N50Q2
• Description: MOSFET N-CH 500V 80A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN80N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 12800pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 12800
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 890
• Rthjc, Max, (ºc/w): 0.14
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
100
80
60
40
20
80
60
40
20
Fig. 1. Output Characteristics
0
0
-50 -25
0
0
Fig. 3. Normalized R
Fig. 5 Drain Current vs. Case Temperature
T
J
V
10
= 25
GS
= 10V
O
1
C
20
0
T
30
I
25
D
C
V
2
T
- Amperes
V
- Degrees C
DS
T
J
GS
J
= 125
= 25
= 9V
- Volts
40
50
8V
7V
6V
O
O
DS(on)
C
C
3
50
75 100 125 150
vs. Drain Current
60
4
70
5V
4V
80
IXFN80N50 - PG 1
5
100
2.8
2.5
2.2
1.9
1.6
1.3
1.0
50
40
30
20
10
80
60
40
20
Fig. 2. High Temperature Output Characteristics
0
0
4.0
25
0
Fig. 4. Temperature Dependence of R
Fig. 6. Input Admittance
V
4.5
T
GS
J
= 125
= 10V
50
2
T
J
5.0
O
= 125
C
T
J
V
o
V
75
C
4
5.5
- Degrees C
GS
DS
I
D
= 80A
- Volts
- Volts
V
GS
6.0
= 9V
100
6
8V
7V
6V
I
D
6.5
=40A
T
IXFN 80N50
J
125
= 25
8
7.0
o
C
4V
5V
7.5
150
10
DS(on)