IXFN50N50 IXYS, IXFN50N50 Datasheet
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Manufacturer Part Number
IXFN50N50
Description
MOSFET N-CH 500V 50A SOT-227B
Specifications of IXFN50N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
625W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
595
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
HiPerFET
Power MOSFET
Single Die MOSFET
Symbol
(T
V
V
I
I
R
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
© 2002 IXYS All rights reserved
GSS
DM
DSS
D25
AR
JM
L
GS(th)
AR
J
stg
DSS
DS(on)
DSS
DGR
GS
GSM
D
ISOL
d
J
= 25 C, unless otherwise specified)
V
V
V
V
V
V
Note 1
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
GS
DS
GS
DS
GS
GS
C
C
C
C
J
J
C
J
=25 C,
= 0 V, I
= V
= 20V; V
= V
= 0 V
= 25°C to 150°C
= 25°C to 150°C
= 25 C
= 25 C
= 25 C
= 25 C
= 10 V, I
Test Conditions
Test Conditions
I
150 C, R
DM
1 mA
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
= 1mA
= 8mA
D
DS
= 0.5 • I
TM
G
= 0V
= 2
t = 1 min
t = 1 s
D25
DD
55N50
IXFK
220
55
55
V
DSS
T
T
55N50
50N50
J
J
500
500
= 25 C
= 125 C
560
60
20
30
10
5
50N50
Maximum Ratings
IXFK
300
200
50
50
0.9/6
Min.
-55 ... +150
-55 ... +150
500
N/A
N/A
N/A
2.5
Characteristic Values
IXFK 55N50
IXFK 50N50
IXFN 55N50
IXFN 50N50
55N50
150
Typ.
IXFN
220
55
55
N/A
2500
3000
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
500
500
600
30
20
30
60
200
100
4.5
25
5
80
2
Max.
200 A
50N50
50 A
50 A
IXFN
V/ns
mJ
mA
m
m
V~
V~
nA
W
C
C
C
C
V
V
V
V
V
V
A
g
V
500V
500V
500V
500V
DSS
TO-264 AA (IXFK)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
International standard packages
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
E153432
DS (on)
55A
50A
55A
50A
I
D25
G
HDMOS
D
TAB = Drain
D
S
100m
100m
R
80m
80m
DS(on)
G
TM
= Drain
process
97502F (04/02)
S
250ns
250ns
250ns
250ns
t
D
D (TAB)
rr
S
Related parts for IXFN50N50
IXFN50N50 Summary of contents
... I = 8mA GS(th 20V GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2002 IXYS All rights reserved IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Maximum Ratings IXFK IXFK IXFN 55N50 50N50 55N50 500 500 500 500 220 200 220 ...
... Characteristic Values Min. Typ. Max. 55 55N50 50 50N50 220 55N50 200 50N50 Note 1 1.5 250 = 100 V 1 4,835,592 4,881,106 4,850,072 4,931,844 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 TO-264 AA Outline Dim. Millimeter Inches n s Min. Max. Min. A 4.82 5.13 .190 A1 2.54 2.89 .100 ...
... C C © 2002 IXYS All rights reserved 10V 100 100 120 120 100 IXF_55N50 75 75 100 125 150 100 125 150 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 Figure 2. Output Characteristics at 125 100 V = 10V T = 125 Volts DS Figure 4. R normalized to 0.5 DS(on) I value vs. T D25 J 2 ...
... IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 250 300 350 0.8 1 Pulse Width - Seconds 4,835,592 4,881,106 4,850,072 4,931,844 IXFK50N50 IXFK55N50 IXFN50N50 IXFN55N50 Figure 8. Capacitance Curves Ciss f = 1MHz Coss Crss Volts 5,017,508 5,049,961 5,187,117 ...
Related keywords
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