IXFN50N50 IXYS, IXFN50N50 Datasheet - Page 3

• Manufacturer Part Number: IXFN50N50
• Description: MOSFET N-CH 500V 50A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN50N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 625W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 330
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 595
• Rthjc, Max, (ºc/w): 0.21
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
140
120
100
2.8
2.8
2.4
2.4
2.0
2.0
1.6
1.6
1.2
1.2
0.8
0.8
80
60
40
20
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
-50
-50
0
0
0
Figure 1. Output Characteristics at 25
Figure 3. R
Figure 5. Drain Current vs. Case Temperature
V
V
-25
-25
GS
GS
T
T
20
20
4
J
J
= 10V
= 10V
= 25
= 25
0
0
O
O
C
C
I
40
40
D25
8
DS(on)
T
T
T
I
I
D
D
25
25
C
C
J
V
= 25
IXF_50N50
- Amperes
- Amperes
value vs. I
- Degrees C
- Degrees C
DS
normalized to 0.5
T
T
O
- Volts
12
60
60
J
J
50
50
C
= 125
= 125
O
O
75
75
C
C
16
80
80
D
IXF_55N50
100 125 150
100 125 150
V
GS
100
100
= 10V
20
9V
8V
7V
6V
5V
O
C
120
120
24
100
IXFK50N50
IXFN50N50
100
80
60
40
20
80
60
40
20
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0
0
3.0
0
25
Figure 6. Admittance Curves
Figure 2. Output Characteristics at 125
Figure 4. R
T
V
V
J
= 125
GS
GS
3.5
= 10V
= 10V
4
O
50
C
I
D25
4.0
DS(on)
V
8
GS
T
V
value vs. T
V
J
= 10V
GS
75
T
DS
- Degrees C
J
9V
8V
7V
normalized to 0.5
= 125
I
4.5
- Volts
D
- Volts
12
= 55A
IXFK55N50
IXFN55N50
o
C
100
5.0
J
16
I
D
= 27.5A
T
T
125
5.5
J
J
20
= 25
= 25
6V
o
o
C
C
5V
6.0
O
24
150
C