IXFN50N50 IXYS, IXFN50N50 Datasheet - Page 4

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IXFN50N50

Manufacturer Part Number
IXFN50N50
Description
MOSFET N-CH 500V 50A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN50N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
625W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
595
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN50N50
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN50N50
Manufacturer:
IXYS
Quantity:
300
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
1.00
0.10
0.01
0.00
12
10
8
6
4
2
0
100
10
0
Figure 7. Gate Charge
80
60
40
20
Figure 10. Transient Thermal Resistance
0
-4
0.2
Figure 9.
50
V
I
DS
D
= 27.5A
100
= 250V
Gate Charge - nC
0.4
T
Forward Voltage Drop of the
Intrinsic Diode
J
150
= 125
V
SD
10
O
C
200
- Volts
-3
0.6
T
J
250
= 25
O
C
0.8
300
350
10
Pulse Width - Seconds
1.0
-2
4,835,592
4,850,072
4,881,106
4,931,844
10000
1000
100
IXFK50N50
IXFN50N50
10
5,017,508
5,034,796
0
Figure 8. Capacitance Curves
-1
5
5,049,961
5,063,307
10
15
V
Coss
DS
Ciss
5,187,117
5,237,481
- Volts
10
20
Crss
0
IXFK55N50
IXFN55N50
25
5,486,715
5,381,025
f = 1MHz
30
6,306,728B1
35
40
10
1

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