IXFN82N60P IXYS, IXFN82N60P Datasheet
IXFN82N60P
Specifications of IXFN82N60P
Related parts for IXFN82N60P
IXFN82N60P Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS All rights reserved IXFN 82N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ±40 72 200 JM 82 100 5 ≤ DSS 1040 -55 ... +150 150 -55 ... +150 300 min 2500 3000 1.5/13 30 Characteristic Values Min. ...
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... I RM Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ Test Current I = 41A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min ...
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... V - Volts DS Fig Normalized to I DS(on) vs. Drain Current 10V 2.8 GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 100 I - Amperes D © 2006 IXYS All rights reserved 180 V = 10V GS 160 8V 140 7V 120 100 4 10V GS 2.8 7V 2.5 2.2 6V 1.9 1.6 1 ...
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... T = 125ºC 100 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 100,000 MHz 10,000 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 160 T = 125ºC 140 J 25ºC - 40ºC 120 100 5 25º ...
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... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFN 82N60P 1 10 ...