IXFN82N60P IXYS, IXFN82N60P Datasheet - Page 4

• Manufacturer Part Number: IXFN82N60P
• Description: MOSFET N-CH 600V 72A SOT-227B
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN82N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 41A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 1040W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 80 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 82 A
• Power Dissipation: 1040 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 82
• Rds(on), Max, Tj=25°c, (?): 0.75
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
120
110
100
250
225
200
175
150
125
100
90
80
70
60
50
40
30
20
10
75
50
25
100
0
0
3.5
0.3
0
0.4
f = 1 MHz
4
5
Fig. 9. Forward Voltage Drop of
0.5
10
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
0.6
Intrinsic Diode
V
15
V
0.7
V
T
GS
SD
DS
J
5
= 125ºC
- Volts
- Volts
- Volts
0.8
20
5.5
T
J
0.9
= 125ºC
25
- 40ºC
25ºC
T
J
1
6
= 25ºC
30
C iss
C oss
C rss
1.1
6.5
35
1.2
1.3
40
7
1,000
100
160
140
120
100
10
10
80
60
40
20
1
9
8
7
6
5
4
3
2
1
0
0
10
0
0
T
R
J
T
T
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
V
I
I
J
C
= - 40ºC
D
G
DS
= 150ºC
25
125ºC
= 25ºC
= 41A
= 10mA
25ºC
20
= 300V
Limit
50
Fig. 8. Transconductance
40
75
Q
Fig. 10. Gate Charge
G
I
- NanoCoulombs
D
V
100
DS
- Amperes
60
- Volts
100
125
DC
80
150
IXFN 82N60P
175
100
200
120
225
25µs
100µs
1ms
10ms
1000
140
250