IXFN82N60P IXYS, IXFN82N60P Datasheet - Page 5

• Manufacturer Part Number: IXFN82N60P
• Description: MOSFET N-CH 600V 72A SOT-227B
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN82N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 41A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 1040W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 80 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 82 A
• Power Dissipation: 1040 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 82
• Rds(on), Max, Tj=25°c, (?): 0.75
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFN 82N60P
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
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