IXFN36N110P IXYS, IXFN36N110P Datasheet
IXFN36N110P
Manufacturer Part Number
IXFN36N110P
Description
MOSFET N-CH 1100V 36A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN36N110P.pdf
(4 pages)
Specifications of IXFN36N110P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1100V (1.1kV)
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Drain-source Breakdown Voltage
1100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN36N110P
Manufacturer:
IPDPOWERONE
Quantity:
1 000
Part Number:
IXFN36N110P
Quantity:
111
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS Corporation, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
t = 1min
t = 1s
D25
T
J
GS
J
≤ 150°C
, Note 1
= 125°C
= 1MΩ
JM
IXFN36N110P
1100
Min.
3.5
Characteristic Values
-55 ... +150
-55 ... +150
1.3/ 11.5
Maximum Ratings
Typ.
1.5/13
1100
1100
1000
2500
3000
±30
±40
150
110
300
36
18
20
30
2
Max.
±300
240
6.5
50
4
Nm/lb.in.
Nm/lb.in.
V/ns
mΩ
mA
nA
μA
V~
V~
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
J
g
V
I
R
t
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Applications:
Features
•
•
•
•
•
•
Advantages
•
•
•
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
G
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
S
D = Drain
240mΩ Ω Ω Ω Ω
300ns
1100V
36A
D
DS99902A (04/08)
S
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IXFN36N110P Summary of contents
Page 1
... D = ±30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS Corporation, All rights reserved IXFN36N110P Maximum Ratings 1100 = 1MΩ 1100 GS ±30 ±40 36 110 ≤ 150° 1000 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 1.3/ 11.5 30 Characteristic Values Min. ...
Page 2
... I = 0.5 • I 117 DSS D D25 157 0.05 Characteristic Values Min. Typ. JM 2.3 16 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN36N110P Max. SOT-227B Outline Ω 0.125 °C/W °C/W Max 144 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 ...
Page 3
... Value 125º 25º IXFN36N110P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 36A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 5 ...
Page 4
... Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC - 40ºC 6.5 7.0 7.5 8.0 8 25ºC J 1.0 1.2 1.4 1.6 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXFN36N110P Fig. 8. Transconductance 40º 25º Amperes D Fig. 10. Gate Charge 550V DS 14 ...