IXFN36N110P IXYS, IXFN36N110P Datasheet - Page 2

• Manufacturer Part Number: IXFN36N110P
• Description: MOSFET N-CH 1100V 36A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN36N110P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1100V (1.1kV)
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Drain-source Breakdown Voltage: 1100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 1000 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1100
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 350
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Notes1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
IXYS reserves the right to change limits, test conditions, and dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
Test Conditions
V
V
Gate input resistance
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
R
DS
GS
GS
GS
GS
G
= 20A, -di/dt = 100A/μs
= I
= 100V, V
= 0V
= 20V, I
= 10V, V
= 1Ω (External)
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
GS
D
DS
DS
DS
= 0.5 • I
= 0V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
20
Characteristic Values
Characteristic Values
1240
0.85
Typ.
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
110
350
157
0.05
117
2.3
32
54
16
23
60
94
45
0.125 °C/W
300
144
1.5
Max.
Max.
36
6,404,065 B1
6,534,343
6,583,505
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN36N110P
7,005,734 B2
7,063,975 B2
7,157,338B2