IXFN36N110P IXYS, IXFN36N110P Datasheet - Page 4

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IXFN36N110P

Manufacturer Part Number
IXFN36N110P
Description
MOSFET N-CH 1100V 36A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN36N110P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1100V (1.1kV)
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Drain-source Breakdown Voltage
1100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
23000
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN36N110P
Manufacturer:
IPDPOWERONE
Quantity:
1 000
Part Number:
IXFN36N110P
Quantity:
111
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
100
1,000
90
80
70
60
50
40
30
20
10
65
60
55
50
45
40
35
30
25
20
15
10
0
100
5
0
0.2
10
4.0
0
4.5
f
0.4
= 1 MHz
5
Fig. 9. Forward Voltage Drop of
5.0
Fig. 7. Input Admittance
T
10
0.6
J
Fig. 11. Capacitance
= 125ºC
5.5
Intrinsic Diode
V
15
V
GS
0.8
V
DS
6.0
SD
T
- Volts
- Volts
J
- Volts
= 125ºC
20
- 40ºC
6.5
25ºC
T
1.0
J
= 25ºC
25
7.0
1.2
30
7.5
C iss
C oss
C rss
1.4
35
8.0
1.6
8.5
40
1.000
0.100
0.010
0.001
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
0.0001
0
0
V
I
I
50
D
G
DS
Fig. 12. Maximum Transient Thermal
10
= 18A
= 10mA
= 550V
0.001
100
Fig. 8. Transconductance
20
150
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
I
- NanoCoulombs
D
0.01
200
Impedance
- Amperes
30
T
J
= - 40ºC
250
IXFN36N110P
40
IXYS REF: F_36N110P(99) 04-01-08-A
300
0.1
25ºC
125ºC
350
50
400
1
60
450
500
10
70

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