QVE11233 Fairchild Optoelectronics Group, QVE11233 Datasheet
QVE11233
Specifications of QVE11233
QVE11233QT
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QVE11233 Summary of contents
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... Tolerance of ± 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2009 Fairchild Semiconductor Corporation QVE11233 Rev. 1.0.0 Description The QVE11233 is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a 0.150” (3.81mm) gap. ...
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... OUTPUT (SENSOR) BV Emitter to Collector Breakdown ECO BV Collector to Emitter Breakdown CEO I Collector to Emitter Leakage CEO COUPLED I On-State Collector Current C(ON) V Saturation Voltage CE (SAT) ©2009 Fairchild Semiconductor Corporation QVE11233 Rev. 1.0 25°C unless otherwise specified) A Parameter (2)(3)(4) (2)(4) (1) ( 25°C) A Test Conditions I = 20mA ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation QVE11233 Rev. 1.0.0 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...