QVE11233 Fairchild Optoelectronics Group, QVE11233 Datasheet - Page 2
![SENS OPTO SLOT 3.81MM TRANS THRU](/photos/14/35/143518/qve11233_sml.jpg)
QVE11233
Manufacturer Part Number
QVE11233
Description
SENS OPTO SLOT 3.81MM TRANS THRU
Manufacturer
Fairchild Optoelectronics Group
Type
Unamplifiedr
Datasheet
1.QVE11233.pdf
(3 pages)
Specifications of QVE11233
Sensing Distance
0.150" (3.81mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Voltage - Collector Emitter Breakdown (max)
30V
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-40°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Response Time
-
Other names
QVE11233QT
QVE11233QT
QVE11233QT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QVE11233
Manufacturer:
Fairchild Semiconductor
Quantity:
1 351
Company:
Part Number:
QVE11233
Manufacturer:
KODENSHI
Quantity:
10 000
©2009 Fairchild Semiconductor Corporation
QVE11233 Rev. 1.0.0
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly, on each component, 1.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16” (1.6mm) from housing.
Electrical/Optical Characteristics
INPUT (EMITTER)
OUTPUT (SENSOR)
INPUT (EMITTER)
OUTPUT (SENSOR)
COUPLED
Symbol
V
BV
BV
Symbol
CE (SAT)
I
I
C(ON)
T
T
CEO
V
V
T
T
V
I
SOL-F
SOL-I
R
ECO
CEO
V
P
P
OPR
STG
CEO
ECO
F
I
I
C
F
R
D
D
Forward Voltage
Reverse Leakage Current
Emitter to Collector Breakdown
Collector to Emitter Breakdown
Collector to Emitter Leakage
On-State Collector Current
Saturation Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Continuous Forward Current
Reverse Voltage
Power Dissipation
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation
Parameter
(1)
(1)
(T
Parameter
A
= 25°C unless otherwise specified)
(2)(3)(4)
(2)(4)
(T
A
= 25°C)
I
V
I
I
V
I
I
F
E
C
F
F
R
CE
= 20mA
= 100µA, E
= 20mA, V
= 20mA, I
= 1mA, E
= 2V
= 10V, E
Test Conditions
2
e
C
CE
e
= 0
e
= 0.25mA
= 0
= 0
= 5V
260 for 10 sec
240 for 5 sec
-40 to +85
-40 to +85
Min.
Rating
5.0
0.5
30
100
150
4.5
50
30
20
6
Typ.
Max.
0.40
100
100
1.7
www.fairchildsemi.com
Units
mW
mW
mA
mA
°C
°C
°C
°C
V
V
V
Units
mA
µA
nA
V
V
V
V