IRLHS6276TRPBF International Rectifier, IRLHS6276TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRLHS6276TRPBF
• Description: MOSFET 2N-CH 20V 4.5A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6276TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1.5 W
• Gate Charge Qg: 3.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
…
†
IRLHS6276PbF
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
R
R
R
Static @ T
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
GS(th)
SD
DS(on)
G
iss
oss
rss
g
gs
gd
rr
θJC
θJC
θJA
θJA
R
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
For DESIGN AID ONLY, not subject to production testing.
2
GS(th)
DSS
θ
DSS
(<10s)
is measured at
(Bottom)
(Top)
/∆T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
J
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
Parameter
f
f
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
8.8
20
Typ. Max. Units
Typ. Max. Units
0.22
–––
-3.8
–––
–––
–––
–––
–––
310
–––
–––
–––
9.3
0.8
3.1
1.3
4.0
4.4
9.3
4.9
5.2
5.0
33
46
10
79
49
9.6
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.0
1.2
7.8
7.5
45
62
40
d
mV/°C
mV/°C
mΩ
µA
nA
nC
pF
nC
ns
ns
Ω
A
V
V
S
V
Typ.
–––
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
ID = 3.4A
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 126A/µs
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
DS
= 3.4A
=1.8Ω
= 25°C, I
= 25°C, I
= V
= 16V, V
= 16V, V
= 10V, I
= 10V
= 10V
= 0V, I
= 4.5V, I
= 2.5V, I
= 12V
= -12V
= 4.5V
= 10V, V
= 0V
GS
d
d
, I
D
(See Fig.17 & 18)
D
S
F
D
= 250µA
D
D
GS
GS
GS
Conditions
Conditions
= 10µA
= 3.4A
= 3.4A
= 3.4A
Max.
= 3.4A
= 3.4A
175
= 0V
= 0V, T
= 4.5V
eÃ
19
86
69
d
d
D
d
ed
ed
= 1mA
, V
, V
www.irf.com
J
= 125°C
DD
GS
G
= 10V
= 0V
Units
°C/W
e
D
S