IRLHS6276TRPBF International Rectifier, IRLHS6276TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLHS6276TRPBF
• Description: MOSFET 2N-CH 20V 4.5A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6276TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1.5 W
• Gate Charge Qg: 3.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current
100
60
50
40
30
20
10
80
60
40
20
Fig 12. On-Resistance vs. Gate Voltage

0
0
25
‚
0
+
-
Starting T J , Junction Temperature (°C)
V GS, Gate -to -Source Voltage (V)
2
50
4
ƒ
75
+
-
•
•
•
•
Fig 16.
SD
6
T J = 125°C
•
•
•
T J = 25°C
100
TOP
BOTTOM 3.4A
8
-
G
I D = 3.4A
125
„
10
I D
0.89A
1.8A
HEXFET
+
150
12
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Fig 13. Typical On-Resistance vs. Drain Current
1000
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
800
600
400
200
250
200
150
100
50
0
0
1E-5
P.W.
SD
DS
0
Fig 15. Typical Power vs. Time
Waveform
Waveform
Ripple ≤ 5%
Body Diode
V GS = 2.5V
Period
for N-Channel
1E-4
5
Body Diode Forward
Diode Recovery
Current
I D , Drain Current (A)
10
IRLHS6276PbF
dv/dt
1E-3
Forward Drop
Time (sec)
di/dt
V GS = 4.5V
15
1E-2
D =
Period
P.W.
20
1E-1
25
V
V
I
SD
GS
DD
=10V
1E+0
30
5