IRLHS6276TRPBF International Rectifier, IRLHS6276TRPBF Datasheet - Page 5
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IRLHS6276TRPBF
Manufacturer Part Number
IRLHS6276TRPBF
Description
MOSFET 2N-CH 20V 4.5A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLHS6276TRPBF.pdf
(9 pages)
Specifications of IRLHS6276TRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.1V @ 10µA
Gate Charge (qg) @ Vgs
3.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
310pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
45 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.5 A
Power Dissipation
1.5 W
Gate Charge Qg
3.1 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLHS6276TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
100
60
50
40
30
20
10
80
60
40
20
Fig 12. On-Resistance vs. Gate Voltage
0
0
25
0
+
-
Starting T J , Junction Temperature (°C)
V GS, Gate -to -Source Voltage (V)
2
50
4
75
+
-
•
•
•
•
Fig 16.
SD
6
T J = 125°C
•
•
•
T J = 25°C
100
TOP
BOTTOM 3.4A
8
-
G
I D = 3.4A
125
10
I D
0.89A
1.8A
HEXFET
+
150
12
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Fig 13. Typical On-Resistance vs. Drain Current
1000
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
800
600
400
200
250
200
150
100
50
0
0
1E-5
P.W.
SD
DS
0
Fig 15. Typical Power vs. Time
Waveform
Waveform
Ripple ≤ 5%
Body Diode
V GS = 2.5V
Period
for N-Channel
1E-4
5
Body Diode Forward
Diode Recovery
Current
I D , Drain Current (A)
10
IRLHS6276PbF
dv/dt
1E-3
Forward Drop
Time (sec)
di/dt
V GS = 4.5V
15
1E-2
D =
Period
P.W.
20
1E-1
25
V
V
I
SD
GS
DD
=10V
1E+0
30
5