IRLHS6276TRPBF International Rectifier, IRLHS6276TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLHS6276TRPBF
• Description: MOSFET 2N-CH 20V 4.5A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6276TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 45 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1.5 W
• Gate Charge Qg: 3.1 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLHS6276PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
S
Qgs1 Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V
(BR)DSS
15V
t p
DRIVER
L
V DS
D.U.T
R G
+
V DD
-
I AS
A
20V
I
0.01 Ω
AS
t p
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
V
DS
90%
+
-
10%
V
GS
≤ 1
≤ 0.1
t
t
t
t
d(on)
d(off)
r
f
Fig 19a. Switching Time Test Circuit
Fig 19b. Switching Time Waveforms
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