SI1058X-T1-GE3 Vishay, SI1058X-T1-GE3 Datasheet

MOSFET N-CH 20V SC89

SI1058X-T1-GE3

Manufacturer Part Number
SI1058X-T1-GE3
Description
MOSFET N-CH 20V SC89
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1058X-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
91 mOhm @ 1.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Vgs(th) (max) @ Id
1.55V @ 250µA
Gate Charge (qg) @ Vgs
5.9nC @ 5V
Input Capacitance (ciss) @ Vds
380pF @ 10V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
1.3A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
124mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
12V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1058X-T1-GE3
Manufacturer:
TRIQUINT
Quantity:
1 088
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 73894
S10-2542-Rev. D, 08-Nov-10
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
20
(V)
C
= 25 °C.
0.091 at V
0.124 at V
R
DS(on)
GS
GS
()
= 4.5 V
= 2.5 V
J
a
G
D
D
= 150 °C)
Ordering Information: Si1058X-T1-GE3 (Lead (Pb)-free and Halogen-free)
b, d
1
2
3
SC-89 (6-LEADS)
N-Channel 20 V (D-S) MOSFET
a
Top View
I
D
1.3
1.1
(A)
a
Steady State
A
Q
6
5
4
g
= 25 °C, unless otherwise noted)
L = 0.1 mH
t 5 s
T
T
T
T
T
3.5
A
A
A
A
A
(Typ.)
D
D
S
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Symbol
Symbol
T
FEATURES
APPLICATIONS
R
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
J
V
V
E
I
I
P
, T
DM
thJA
I
AS
I
GS
DS
AS
D
S
D
Definition
stg
Marking Code
T
g
WL
Part Number Code
and UIS Tested
Typical
®
440
540
Power MOSFET
Lot Traceability
and Date Code
- 55 to 150
0.236
0.151
1.03
1.3
0.2
Limit
± 12
2.45
20
6
7
b, c
b, c
b, c
b, c
b, c
Maximum
530
650
Vishay Siliconix
Si1058X
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI1058X-T1-GE3 Summary of contents

Page 1

... DS(on) 0.091 4 0.124 2 SC-89 (6-LEADS Ordering Information: Si1058X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1058X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 73894 S10-2542-Rev. D, 08-Nov- °C, unless otherwise noted 2 1 1.8 2 Si1058X Vishay Siliconix 1.8 1 125 °C C 1.2 0.9 0.6 0 ° 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temp. 600 500 C iss ...

Page 4

... Si1058X Vishay Siliconix TYPICAL CHARACTERISTICS ( 150 °C J 0.1 0.01 0.001 0.4 0 0.2 - Source-to-Drain Voltage ( Source-Drain Diode Forward Voltage 1.6 1.3 1.0 0.7 0 Temperature (°C) J Threshold Voltage www.vishay.com °C, unless otherwise noted) A 0.20 0. °C J 0.12 0.08 0.04 0.8 0 250 µ 100 125 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73894. Document Number: 73894 S10-2542-Rev. D, 08-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1058X Vishay Siliconix Notes Duty Cycle ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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