SI1058X-T1-GE3 Vishay, SI1058X-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI1058X-T1-GE3
• Description: MOSFET N-CH 20V SC89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1058X-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.55V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 124mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si1058X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted)
a
V
Symbol
V
R
V
GS(th)
I
t
t
I
I
C
V
D(on)
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
DS
g
Q
R
SM
t
t
t
oss
t
DS
t
SD
iss
rss
rr
gd
a
b
fs
gs
r
f
g
g
rr
/T
/T
J
J
V
I
V
V
V
D
DS
DS
DS
DS
 1.0 A, V
I
= 10 V, V
F
= 20 V, V
V
V
= 10 V, V
V
= 10 V, V
V
V
V
V
V
= 1.0 A, dI/dt = 100 A/µs
V
DS
DS
DS
GS
GS
GS
DD
DS
DS
Test Conditions
=  5 V, V
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 2.5 V, I
= 20 V, V
= 10 V, R
= 10 V, I
I
D
f = 1 MHz
I
GEN
S
GS
GS
= 250 µA
GS
GS
GS
= 1.0 A
, I
= 4.5 V, I
= 0 V, T
= 4.5 V, R
D
GS
= 0 V, f = 1 MHz
= 5 V, I
D
GS
D
= 250 µA
D
D
GS
= 250 µA
L
= ± 12 V
= 1.3 A
= 1.3 A
= 1.1 A
= 15 
= 4.5 V
= 0 V
D
J
D
= 85 °C
= 1.3 A
g
= 1.3 A
= 1 
Min.
0.7
20
6
0.076
0.103
S10-2542-Rev. D, 08-Nov-10
Typ.
18.9
- 3.6
3.51
0.82
0.61
10.4
380
5.5
3.9
4.3
0.8
3.7
6.5
3.9
75
45
20
13
8
6
Document Number: 73894
± 100
0.091
0.124
Max.
1.55
5.9
5.3
5.6
1.2
5.7
10
12
30
18
16
1
9
6
mV/°C
Unit
nA
nA
µA
pF
nC
nC
ns
ns


V
V
A
S
V