SI1058X-T1-GE3 Vishay, SI1058X-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI1058X-T1-GE3
• Description: MOSFET N-CH 20V SC89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1058X-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1.55V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 380pF @ 10V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 124mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si1058X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
0.001
0.01
0.1
10
1.6
1.3
1.0
0.7
0.4
1
0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
T = 150 °C
J
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
0.4
- Temperature (°C)
50
0.6
75
I
Limited by R
D
0.001
= 250 µA
A
0.01
0.1
10
= 25 °C, unless otherwise noted)
100
1
T = 25 °C
0.1
J
0.8
* V
Single Pulse
Safe Operating Area, Junction-to-Ambient
DS(on)
T
125
A
GS
= 25 °C
*
150
minimum V
V
1
DS
- Drain-to-Source Voltage (V)
1
BVDSS Limited
GS
at which R
0.20
0.16
0.12
0.08
0.04
5.0
4.0
3.0
2.0
1.0
10
DS(on)
0
0.01
0
I
is specified
D
= 1.3 A
1 ms
10 ms
100 ms
1 s
10 s
DC
R
0.1
1
DS(on)
V
GS
100
Single Pulse Power
- Gate-to-Source Voltage (V)
vs. V
1
2
Time (s)
GS
S10-2542-Rev. D, 08-Nov-10
vs. Temperature
Document Number: 73894
10
3
T
A
T
A
= 25 °C
100
= 125 °C
4
1000
5