FQD6N60CTM_WS Fairchild Semiconductor, FQD6N60CTM_WS Datasheet - Page 4

• Manufacturer Part Number: FQD6N60CTM_WS
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD6N60CTM_WS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQD6N60C Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
-1
1.2
1.1
1.0
0.9
0.8
2
1
0
10
-100
0
vs. Temperature
-50
V
DS
Operation in This Area
is Limited by R
T
10
, Drain-Source Voltage [V]
J
, Junction Temperature [
1
1 0
1 0
0
1 0
※
1. T
2. T
3. Single Pulse
-1
-2
1 0
0
Notes :
C
J
-5
= 25
= 150
DS(on)
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
0 .1
0 .2
o
C
o
50
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
10
1 0
s in g le p u ls e
100
2
-4
o
1 ms
C]
t
※
1
1. V
2. I
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
100 s
Notes :
D
GS
= 250 µA
= 0 V
150
10 s
1 0
-3
10
(Continued)
200
3
4
1 0
-2
4.5
3.0
1.5
0.0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
-1
N o te s :
θ J C
J M
50
-50
( t) = 1 .5 6
- T
vs. Case Temperature
C
= P
T
C
T
vs. Temperature
, Case Temperature [ ]
D M
1 0
J
, Junction Temperature [
℃
* Z
0
0
75
/W M a x .
1
θ J C
/t
2
( t)
50
100
1 0
1
℃
100
o
C]
125
※
1. V
2. I
Notes :
150
D
GS
= 2.0 A
= 10 V
www.fairchildsemi.com
150
200