FQD6N60CTM_WS Fairchild Semiconductor, FQD6N60CTM_WS Datasheet - Page 5

• Manufacturer Part Number: FQD6N60CTM_WS
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD6N60CTM_WS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQD6N60C Rev. A
10V
10V
10V
10V
12V
12V
t
t
p
p
3mA
3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
I
I
I
V
V
DS
DS
D
D
D
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
L
L L
as DUT
as DUT
R
R
L
L
V
V
DD
DD
V
V
DD
DD
5
V
V
DS
DS
BV
BV
V
V
V
V
10V
10V
DSS
DSS
V
V
I
I
V
V
GS
GS
DD
DD
AS
AS
DS
DS
GS
GS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
1 ----
----
----
----
1
1
1
2
2
2
2
t
t
on
on
L I
L I
L I
t
t
r
r
I
I
AS
AS
AS
D
D
Q
Q
(t)
(t)
t
t
2
2
2
Q
Q
p
p
g
g
gd
gd
Charge
Charge
--------------------
--------------------
BV
BV
BV
BV
DSS
DSS
DSS
DSS
t
t
- V
- V
d(off)
d(off)
t
t
DD
DD
off
off
Time
Time
t
t
f
f
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V
V
DS
DS
(t)
(t)