FQD6N60CTM_WS Fairchild Semiconductor, FQD6N60CTM_WS Datasheet - Page 7

• Manufacturer Part Number: FQD6N60CTM_WS
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD6N60CTM_WS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 810pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
D-PAK
Dimensions in Millimeters
www.fairchildsemi.com
7
FQD6N60C Rev. A