FDS6673BZ_F085 Fairchild Semiconductor, FDS6673BZ_F085 Datasheet

MOSFET P-CH 30V 14.5A 8-SOIC

FDS6673BZ_F085

Manufacturer Part Number
FDS6673BZ_F085
Description
MOSFET P-CH 30V 14.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6673BZ_F085

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.8 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
124nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDS6673BZ_F085 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDS6673BZ_F085
P-Channel PowerTrench
-30V, -14.5A, 7.8mΩ
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load
Computers and Portable Battery Packs.
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJC
Symbol
, T
Device Marking
STG
FDS6673BZ
switching
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Operating and Storage Temperature
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
applications
D
D
FDS6673BZ _F085
SO-8
D
-Pulsed
D
common
Device
S
S
Parameter
in
S
T
A
G
= 25°C unless otherwise noted
Notebook
®
Reel Size
MOSFET
1
13’’
Features
Max r
Max r
Extended V
HBM ESD protection level of 6.5kV typical (note 3)
High performance trench technology for extremely low
r
High power and current handling capability
RoHS compliant
Qualified to AEC Q101
DS(on)
6
7
8
5
DS(on)
DS(on)
(Note1a)
(Note1a)
(Note1b)
(Note1c)
GS
= 7.8mΩ, V
= 12mΩ, V
range (-25V) for battery applications
Tape Width
12mm
GS
GS
= -4.5V, I
= -10V, I
-55 to 150
4
3
1
2
Ratings
-14.5
±25
-30
-75
2.5
1.2
1.0
50
25
D
D
= -14.5A
= -12A
July 2009
www.fairchildsemi.com
2500 units
Quantity
Units
°C/W
°C/W
°C
W
V
V
A
A

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FDS6673BZ_F085 Summary of contents

Page 1

... Thermal Resistance , Junction to Ambient (Note 1a) θJA R Thermal Resistance , Junction to Case (Note 1) θJC Package Marking and Ordering Information Device Marking Device FDS6673BZ _F085 FDS6673BZ ©2009 Fairchild Semiconductor Corporation FDS6673BZ_F085 Rev. A ® MOSFET Features Max r DS(on) Max r DS(on) Extended V HBM ESD protection level of 6.5kV typical (note 3) in ...

Page 2

... Scale letter size paper 2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS6673BZ_F085 Rev 25°C unless otherwise noted J Test Conditions I = -250µ ...

Page 3

... Normalized On Resistance vs Junction Temperature 80 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX 150 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDS6673BZ_F085 Rev 25°C unless otherwise noted J 4.0 3.8 µ s 3.6 3.4 3 3.0 GS 2.8 2.6 2.4 2.2 2.0 1.8 1 3.5V 1.4 1.2 1 ...

Page 4

... T = 150 0.1 0.01 1E-3 1E (V) GS Figure -4. 100 T , AMBIENT TEMPERATURE A Figure 11. Maximum Continuous Drain Current vs Ambient Temperature FDS6673BZ_F085 Rev 25°C unless otherwise noted J 6000 V = -15V DD 1000 V = -20V DD 100 60 80 100 0.1 Figure 8. Capacitance vs Drain to Source Voltage Figure 10. GS 100 -10V GS 1 THIS AREA IS LIMITED ...

Page 5

... Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDS6673BZ_F085 Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) ...

Page 6

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS6673BZ_F085 Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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