FDS6673BZ_F085 Fairchild Semiconductor, FDS6673BZ_F085 Datasheet - Page 2

• Manufacturer Part Number: FDS6673BZ_F085
• Description: MOSFET P-CH 30V 14.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6673BZ_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS6673BZ_F085 Rev. A
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
B
∆B
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
VDSS
GS(th)
SD
∆T
∆T
iss
oss
rss
g
g
gs
gd
rr
drain pins. R
Symbol
VDSS
θJA
GS(th)
Scale 1 : 1 on letter size paper
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJC
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
is guaranteed by design while R
(Note 2)
a) 50
Parameter
when mounted on a 1 in
pad of 2 oz copper
o
C/W (10 sec)
(Note 2)
θCA
T
is determined by the user’s board design.
J
= 25°C unless otherwise noted
2
I
I
25°C
V
V
V
I
25°C
V
V
V
T
V
V
f = 1.0MHz
V
V
V
I
V
I
I
D
D
D
D
I
F
F
J
D
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
DS
GS
= 14.5A, di/dt = 100A/µs
= 14.5A, di/dt = 100A/µs
= -250µA, V
= -250µA, referenced to
= -250µA, referenced to
= -14.5A
= 125
= -14.5A
2
= -24V, V
= -5V, I
= -15V, V
= -15V, V
= -15V, V
= 0V, I
= ±25V, V
= V
= -10V , I
= -4.5V, I
= -10V, I
= -15V, I
= -10V, R
Test Conditions
b) 105
on a .04 in
copper
DS
o
C
, I
S
o
D
C/W when mounted
= -2.1A
D
D
D
D
D
= -14.5A
GS
GS
GS
GS
GS
GS
DS
= -250µA
= -14.5A
= -1A
= -14.5A
= -12A
2
= 0V
pad of 2 oz
= 0V,
= -10V,
= -5V,
= 6Ω
= 0V
= 0V
Min
-30
-1
c) 125
3500
14
16
23.5
Typ
-1.9
600
600
225
105
-0.7
-20
8.1
6.5
9.6
9.7
on a minimun pad
60
88
46
8
o
C/W when mounted
www.fairchildsemi.com
4700
Max
±10
800
900
36
167
124
-1.2
7.8
12
12
26
29
65
45
34
-1
-3
mV/°C
mV/°C
Units
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
V
V
S
V
ns
ns
ns