FDS6673BZ_F085 Fairchild Semiconductor, FDS6673BZ_F085 Datasheet - Page 4

MOSFET P-CH 30V 14.5A 8-SOIC

FDS6673BZ_F085

Manufacturer Part Number
FDS6673BZ_F085
Description
MOSFET P-CH 30V 14.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6673BZ_F085

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.8 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
124nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDS6673BZ_F085 Rev. A
Typical Characteristics
Figure 11.
1000
1E-3
1E-4
0.01
100
0.1
10
16
12
Figure 7.
10
1
8
4
0
8
6
4
2
0
25
0
0
Maximum Continuous Drain Current vs
5
Ambient Temperature
T
50
A
Figure 9.
20
Gate Charge Characteristics
, AMBIENT TEMPERATURE
10
V
Q
V
T
DD
g
GS
J
, GATE CHARGE(nC)
= 150
= -10V
= -4.5V
75
40
15
-V
o
I
C
GS
g
(V)
vs V
20
100
60
T
T
V
GS
V
J
DD
J
GS
= 25
= 25°C unless otherwise noted
= -20V
25
= -10V
o
(
C
V
125
o
DD
C
80
)
= -15V
30
150
100
35
4
Figure 8.
Figure 12. Forward Bias Safe Operating Area
Figure 10.
0.01
1000
100
6000
0.1
100
10
10
40
1
0.01
1
10
0.1
-2
THIS AREA IS
LIMITED BY r
Capacitance vs Drain to Source Voltage
f = 1MHz
V
GS
T
J
= 0V
-V
-V
10
Unclamped Inductive Switching
= 125
0.1
DS
DS
-1
t
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
AV
, DRAIN TO SOURCE VOLTAGE (V)
J
C
θ
DS(on)
JA
o
= MAX RATED
= 25
, TIME IN AVALANCHE(ms)
C
Capability
= 125
o
C
10
o
1
C/W
1
0
C
rss
C
iss
10
T
1
10
C
J
oss
= 25
www.fairchildsemi.com
o
C
10
100 ms
1s
1ms
100
10 ms
10s
DC
10
2
100
μ
s
10
500
30
3

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