FDD16AN08A0_F085 Fairchild Semiconductor, FDD16AN08A0_F085 Datasheet
FDD16AN08A0_F085
Specifications of FDD16AN08A0_F085
Related parts for FDD16AN08A0_F085
FDD16AN08A0_F085 Summary of contents
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... For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality ©2008 Fairchild Semiconductor Corporation FDD16AN08A0_F085 Rev. A1 Applications = 50A • 42V Automotive Load Control D • ...
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... Turn-Off Time OFF Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes: 1: Starting T = 25° 155 35A FDD16AN08A0_F085 Rev. A1 Package Reel Size TO-252AA 330mm T = 25°C unless otherwise noted C Test Conditions I = 250 60V ...
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... SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 1000 V = 10V GS 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FDD16AN08A0_F085 Rev 25°C unless otherwise noted 150 175 125 o C) Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4 ...
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... V = 10V GS 0.012 0. DRAIN CURRENT (A) D Figure 9. Drain to Source On Resistance vs Drain Current FDD16AN08A0_F085 Rev 25°C unless otherwise noted C 100 10 s 100 s 1ms 10 10ms DC STARTING T 1 100 0.01 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching ...
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... Junction Temperature 5000 1000 OSS RSS GD 100 1MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage FDD16AN08A0_F085 Rev 25°C unless otherwise noted C 1 250 1.1 1.0 0.9 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit FDD16AN08A0_F085 Rev DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms ...
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... Thermal resistances corresponding to other copper areas can be obtained from Figure calculation using Equation 2. The area, in square inches is the top copper area including the gate and source pads. 23.84 33.32 + ------------------------------------ - 0.268 + Area FDD16AN08A0_F085 Rev and the 125 application’s ambient 100 never exceeded. ...
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... S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.5 VOFF=-1) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. FDD16AN08A0_F085 Rev. A1 DPLCAP ...
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... FDD16AN08A0_F085 Rev. A1 DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + ...
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... SABER thermal model FDD16AN08A0T template thermal_model th tl thermal_c th ctherm.ctherm1 0.002 ctherm.ctherm2 0.004 ctherm.ctherm3 0.006 ctherm.ctherm4 0.01 ctherm.ctherm5 0.03 ctherm.ctherm6 0.08 rtherm.rtherm1 0.075 rtherm.rtherm2 0.09 rtherm.rtherm3 0.1 rtherm.rtherm4 0.15 rtherm.rtherm5 0.2 rtherm.rtherm6 0.25 } FDD16AN08A0_F085 Rev. A1 JUNCTION th RTHERM1 6 RTHERM2 5 RTHERM3 4 RTHERM4 3 RTHERM5 2 RTHERM6 tl CASE 10 ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD16AN08A0_F085 Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...