FDD16AN08A0_F085 Fairchild Semiconductor, FDD16AN08A0_F085 Datasheet - Page 4

• Manufacturer Part Number: FDD16AN08A0_F085
• Description: MOSFET N-CH 75V 50A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDD16AN08A0_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1874pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD16AN08A0_F085 Rev. A1
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Figure 5. Forward Bias Safe Operating Area
0.022
0.020
0.018
0.016
0.014
0.012
100
0.01
100
500
0.1
75
50
25
10
0
1
3.5
0
1
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
T
DD
OPERATION IN THIS
J
LIMITED BY r
T
T
SINGLE PULSE
= 25
J
C
= 15V
4.0
= MAX RATED
= 25
AREA MAY BE
o
C
10
V
V
o
C
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
4.5
T
DS(ON)
I
J
D
= 175
, DRAIN CURRENT (A)
Current
20
V
5.0
GS
V
o
C
GS
= 10V
10
= 6V
5.5
30
T
C
DC
= 25°C unless otherwise noted
T
6.0
J
= -55
10ms
40
10 s
100 s
1ms
o
C
6.5
100
7.0
50
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
4
100
100
10
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
75
50
25
1
0.01
2.5
2.0
1.5
1.0
0.5
0
-80
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
STARTING T
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
GS
= 20V
-40
If R = 0
t
If R
t
V
AV
AV
0.1
DS
T
J
t
1
J
= (L)(I
= (L/R)ln[(I
AV
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
= 150
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0
, TIME IN AVALANCHE (ms)
0
Capability
AS
o
C
)/(1.3*RATED BV
V
GS
AS
40
*R)/(1.3*RATED BV
= 7V
1
2
V
V
80
GS
V
GS
STARTING T
GS
= 10V
DSS
= 6V
= 5V
V
GS
120
- V
www.fairchildsemi.com
10
= 10V, I
o
DD
DSS
3
C)
)
J
- V
= 25
T
160
C
D
DD
= 25
=50A
o
) +1]
C
o
C
100
200
4