FDB024N04AL7 Fairchild Semiconductor, FDB024N04AL7 Datasheet

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FDB024N04AL7

Manufacturer Part Number
FDB024N04AL7
Description
MOSFET N-CH 40V D2PAK-7
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB024N04AL7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
109nC @ 10V
Input Capacitance (ciss) @ Vds
7300pF @ 25V
Power - Max
214W
Mounting Type
Surface Mount
Package / Case
TO-263-8, D²Pak (7 leads + Tab), TO-263CA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 mOhms
Forward Transconductance Gfs (max / Min)
368 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
219 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
84 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FDB024N04AL7 Rev. A2
MOSFET Maximum Ratings
Thermal Characteristics
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDB024N04AL7
N-Channel PowerTrench
40V, 219A, 2.4mΩ
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
J
L
DSS
GSS
AS
D
θJC
θJA
, T
Symbol
Symbol
R
STG
DS(on)
DS(on)
= 2.0mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
= 10V, I
D
= 80A
T
C
FDB Series with suffix -L7
= 25
D
Parameter
Parameter
- Continuous (T
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
2
®
-PAK-7L
C
o
C unless otherwise noted*
= 25
MOSFET
o
C)
C
C
C
= 25
= 100
= 25
1
o
C
Description
This
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
o
o
C, Silicon Limited)
C, Package Limited)
o
C, Silicon Limited)
N-Channel
(Pin1)
(Note 1)
(Note 2)
(Note 3)
G
MOSFET
S (Pin2,3,5,6,7)
D (Pin4, tab)
is
-55 to +175
Ratings
Ratings
219
155
1.43
62.5
±20
100
876
864
214
300
produced
6.0
0.7
40
*
*
August 2010
www.fairchildsemi.com
using
Fairchild
Units
W/
Units
o
V/ns
C/W
mJ
o
o
W
V
V
A
A
C
C
o
C

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FDB024N04AL7 Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDB024N04AL7 Rev. A2 ® MOSFET Description = 80A This N-Channel D Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 80A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB024N04AL7 Rev. A2 Package Reel Size D2-PAK-7L 330mm unless otherwise noted C Test Conditions I = 250μA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 8000 C iss = oss = rss = oss 6000 C iss 4000 2000 C rss 0 0 Drain-Source Voltage [V] DS FDB024N04AL7 Rev. A2 Figure 2. Transfer Characteristics 300 100 10.0V GS 8.0V 7.0V 6.0V 4.0V 3.5V 3. 1.5 Figure 4. Body Diode Forward Voltage 300 100 10 ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 11. Unclamped Inductive Switching Capability 600 (L)(I )/(1.3*RATED ≠ (L/R)ln[(I *R)/(1.3*RATED 100 10 STARTING T 1 0.001 0.01 0 TIME IN AVALANCHE (ms) AV FDB024N04AL7 Rev. A2 (Continued) Figure 8. On-Resistance Variation vs. *Notes μ 250 100 150 200 μ 100 s 1ms 10ms 100ms ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDB024N04AL7 Rev. A2 (Continued *Notes (t) = 0.7 θ Duty Factor Rectangular Pulse Duration [sec C/W Max (t) θ www.fairchildsemi.com ...

Page 6

... FDB024N04AL7 Rev. A2 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB024N04AL7 Rev. A2 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 8

... Mechanical Dimensions FDB024N04AL7 Rev PAK-7L 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB024N04AL7 Rev. A2 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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