FDB024N04AL7 Fairchild Semiconductor, FDB024N04AL7 Datasheet - Page 5

• Manufacturer Part Number: FDB024N04AL7
• Description: MOSFET N-CH 40V D2PAK-7
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB024N04AL7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D²Pak (7 leads + Tab), TO-263CA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Forward Transconductance Gfs (max / Min): 368 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 219 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB024N04AL7 Rev. A2
Typical Performance Characteristics
0.01
0.1
1
10
-5
Single pulse
0.5
0.2
0.02
0.05
0.01
0.1
Figure 12. Transient Thermal Response Curve
10
-4
Rectangular Pulse Duration [sec]
10
(Continued)
-3
5
10
-2
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
JM
JC
(t) = 0.7
- T
C
= P
10
t
1
o
DM
t
2
C/W Max.
-1
* Z
1
θ
/t
JC
2
(t)
1
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