FDB024N04AL7 Fairchild Semiconductor, FDB024N04AL7 Datasheet - Page 3

• Manufacturer Part Number: FDB024N04AL7
• Description: MOSFET N-CH 40V D2PAK-7
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB024N04AL7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D²Pak (7 leads + Tab), TO-263CA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Forward Transconductance Gfs (max / Min): 368 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 219 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB024N04AL7 Rev. A2
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
8000
6000
4000
2000
300
100
Figure 1. On-Region Characteristics
10
2.4
2.2
2.0
1.8
1.6
1
0.01
0
0.1
0
Drain Current and Gate Voltage
V
V
70
DS
DS
*Notes:
C
C
, Drain-Source Voltage[V]
, Drain-Source Voltage [V]
1. 250
2. T
oss
rss
I
C
D
V
C
, Drain Current [A]
iss
V
0.1
GS
= 25
GS
μ
140
s Pulse Test
= 10V
= 20V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
o
C
210
*Note: T
V
(
GS
1
C ds = shorted
*Note:
1. V
2. f = 1MHz
= 10.0V
280
C
10
8.0V
7.0V
6.0V
4.0V
3.5V
3.0V
= 25
GS
= 0V
o
C
)
350
5
25
3
300
100
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
300
100
1
10
1.5
1
10
0.2
8
6
4
2
0
*Notes:
0
1. V
2. 250
DS
V
2.0
μ
SD
= 5V
Variation vs. Source Current
s Pulse Test
and Temperature
0.4
V
, Body Diode Forward Voltage [V]
GS
175
175
, Gate-Source Voltage[V]
Q
o
g
C
V
V
V
, Total Gate Charge [nC]
o
C
DS
DS
DS
30
2.5
0.6
= 8V
= 20V
= 32V
3.0
0.8
-55
*Notes:
1. V
2. 250
o
25
25
C
*Note: I
60
GS
o
o
C
μ
C
= 0V
s Pulse Test
3.5
1.0
D
www.fairchildsemi.com
= 80A
4.0
1.2
90