IRFHS8342TRPBF International Rectifier, IRFHS8342TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFHS8342TRPBF
• Description: MOSFET N-CH 30V 8.8A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS8342TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 4.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFHS8342PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
0.1
10
20
16
12
1
0.01
8
4
0
100
0.3
0.1
10
25
Fig 9. Maximum Drain Current vs.
1
1E-006
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
Case (Bottom) Temperature
T J = 150°C
V SD , Source-to-Drain Voltage (V)
D = 0.50
50
0.5
T C , Case Temperature (°C)
0.01
0.02
0.20
0.10
0.05
0.6
LIMITED BY PACKAGE
75
1E-005
0.7
SINGLE PULSE
( THERMAL RESPONSE )
100
0.8
T J = 25°C
V GS = 0V
0.9
125
0.0001
1.0
t 1 , Rectangular Pulse Duration (sec)
150
1.1
0.001
1000
Fig 10. Threshold Voltage vs. Temperature
100
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
1
0.01
0.1
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
Limited by
Wire Bond
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
0
0.1
10msec
DC
25
100μsec
50
1msec
10
I D = 25μA
75 100 125 150
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