IRFHS8342TRPBF International Rectifier, IRFHS8342TRPBF Datasheet - Page 4
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IRFHS8342TRPBF
Manufacturer Part Number
IRFHS8342TRPBF
Description
MOSFET N-CH 30V 8.8A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFHS8342TRPBF.pdf
(9 pages)
Specifications of IRFHS8342TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
19 A
Power Dissipation
2.1 W
Gate Charge Qg
4.2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFHS8342TRPBF
Manufacturer:
LG
Quantity:
101
Part Number:
IRFHS8342TRPBF
Manufacturer:
IR
Quantity:
20 000
IRFHS8342PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
0.1
10
20
16
12
1
0.01
8
4
0
100
0.3
0.1
10
25
Fig 9. Maximum Drain Current vs.
1
1E-006
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
Case (Bottom) Temperature
T J = 150°C
V SD , Source-to-Drain Voltage (V)
D = 0.50
50
0.5
T C , Case Temperature (°C)
0.01
0.02
0.20
0.10
0.05
0.6
LIMITED BY PACKAGE
75
1E-005
0.7
SINGLE PULSE
( THERMAL RESPONSE )
100
0.8
T J = 25°C
V GS = 0V
0.9
125
0.0001
1.0
t 1 , Rectangular Pulse Duration (sec)
150
1.1
0.001
1000
Fig 10. Threshold Voltage vs. Temperature
100
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
1
0.01
0.1
-75 -50 -25
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
Limited by
Wire Bond
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
0
0.1
10msec
DC
25
100μsec
50
1msec
10
I D = 25μA
75 100 125 150
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