IRFHS8342TRPBF International Rectifier, IRFHS8342TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRFHS8342TRPBF
• Description: MOSFET N-CH 30V 8.8A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS8342TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 4.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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www.irf.com
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
http://www.irf.com/product-info/reliability
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
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PQFN 2mm x 2mm
(per JE DE C JE S D47F
Visit us at www.irf.com for sales contact information.11/2010
Data and specifications subject to change without notice.
Cons umer
Yes
(per JE DE C J-S T D-020D
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guidelines )
IRFHS8342PbF
MS L1
TAC Fax: [phone]
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