IRFHS8342TRPBF International Rectifier, IRFHS8342TRPBF Datasheet - Page 5
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IRFHS8342TRPBF
Manufacturer Part Number
IRFHS8342TRPBF
Description
MOSFET N-CH 30V 8.8A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFHS8342TRPBF.pdf
(9 pages)
Specifications of IRFHS8342TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
19 A
Power Dissipation
2.1 W
Gate Charge Qg
4.2 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFHS8342TRPBF
Manufacturer:
LG
Quantity:
101
Part Number:
IRFHS8342TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 12. On-Resistance vs. Gate Voltage
35
30
25
20
15
10
5
0
+
-
V GS, Gate -to -Source Voltage (V)
5
+
-
•
•
•
•
Fig 15.
SD
10
600
500
400
300
200
100
•
•
•
0
1E-5
T J = 25°C
T J = 125°C
15
-
G
I D = 8.5A
1E-4
Fig 14. Typical Power vs. Time
HEXFET
+
20
1E-3
Time (sec)
®
+
-
Power MOSFETs
Re-Applied
Voltage
1E-2
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 13. Typical On-Resistance vs. Drain Current
1E-1
30
25
20
15
10
5
P.W.
SD
DS
0
Waveform
Waveform
1E+0
Ripple ≤ 5%
Body Diode
10
Period
for N-Channel
Body Diode Forward
Diode Recovery
20
Current
I D , Drain Current (A)
dv/dt
Forward Drop
IRFHS8342PbF
di/dt
30
Vgs = 4.5V
D =
40
Period
P.W.
50
Vgs = 10V
V
V
I
60
SD
GS
DD
=10V
70
5