IRLR6225PBF International Rectifier, IRLR6225PBF Datasheet

MOSFET N-CH 20V 100A DPAK

IRLR6225PBF

Manufacturer Part Number
IRLR6225PBF
Description
MOSFET N-CH 20V 100A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR6225PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 21A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.1V @ 50µA
Gate Charge (qg) @ Vgs
72nC @ 4.5V
Input Capacitance (ciss) @ Vds
3770pF @ 10V
Power - Max
63W
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
3200µohm
Rds(on) Test Voltage Vgs
4.5V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
D-PAK
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
4 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
100 A
Power Dissipation
63 W
Mounting Style
SMD/SMT
Gate Charge Qg
48 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications
Features and Benefits
Notes
www.irf.com
Orderable part number
IRLR6225PbF
IRLR6225TRPbF
Features
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
V
V
I
I
I
P
P
T
T
Absolute Maximum Ratings
D
D
DM
DS
GS
D
D
J
STG
Battery Protection Switch
@ T
@ T
@T
@ T
C
C

C
C
= 25°C
= 100°C
= 25°C
through
(@V
(@V
= 100°C
R
R
R
Q
DS(on) max
DS(on) max
G (typical)
g (typical)
GS
GS
V
I
DS
D
= 4.5V)
= 2.5V)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Package Type
42
4.0
5.2
2.2
20
48
D-PAK
D-PAK
g
g
Parameter
mΩ
mΩ
g
nC
V
A
GS
GS
@ 10V
@ 10V
Tape and Reel
Tube/Bulk
G
Form
results in Easier Manufacturing
Standard Pack
Gate
D
S
G
300 (1.6mm from case)
Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
IRLR6225PbF
HEXFET Power MOSFET
Quantity
-55 to + 150
2000
75
100
Max.
63
400
±12
0.5
20
63
25
h
h
Drain
IRLR6225PbF
D
D-Pak
Note
Source
11/15/2010
Units
W/°C
S
°C
W
V
A
1

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IRLR6225PBF Summary of contents

Page 1

... Easier Manufacturing Package Type Standard Pack Form D-PAK Tube/Bulk D-PAK Tape and Reel Parameter @ 10V GS @ 10V IRLR6225PbF HEXFET Power MOSFET D D-Pak S IRLR6225PbF G D Gate Drain Source Benefits Multi-Vendor Compatibility ⇒ Environmentally Friendlier Increased Reliability Note Quantity 75 2000 Max. 20 ±12 h 100 h ...

Page 2

... IRLR6225PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Fig 4. Normalized On-Resistance vs. Temperature 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 100 Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage IRLR6225PbF TOP BOTTOM 1.5V ≤ 60µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1 42A 4.5V 1 ...

Page 4

... IRLR6225PbF 1000 100 150° 25°C 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 Limited By Package Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature 0.50 1 0.20 0.10 0.05 ...

Page 5

... Fig 13. Maximum Avalanche Energy vs. Drain Current 15V DRIVER + Fig 14b. Unclamped Inductive Waveforms 10% V IRLR6225PbF TOP BOTTOM 17A 100 125 Starting Junction Temperature (°C) V (BR)DSS d(on) d(off Fig 15b. Switching Time Waveforms I D 5.9A 8 ...

Page 6

... IRLR6225PbF D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G + Voltage Body Diode - Inductor Curent Ripple ≤ 5% ® HEXFET ...

Page 7

... IRLR6225PbF ,5)5 $   ,5)5   7 ...

Page 8

... IRLR6225PbF 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO EIA-481. † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability † ...

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