IRLR6225PBF International Rectifier, IRLR6225PBF Datasheet - Page 6

• Manufacturer Part Number: IRLR6225PBF
• Description: MOSFET N-CH 20V 100A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR6225PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 21A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.1V @ 50µA
• Gate Charge (qg) @ Vgs: 72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3770pF @ 10V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 3200µohm
• Rds(on) Test Voltage Vgs: 4.5V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 100 A
• Power Dissipation: 63 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR6225PbF
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6
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+
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Fig 17. Gate Charge Test Circuit
D.U.T
1K
ƒ
+
-
•
•
•
•
Fig 16.
SD
S
•
•
•
DUT
-
L
„
G
+
HEXFET
VCC
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
for N-Channel
Fig 18. Gate Charge Waveform
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgodr
V
V
I
SD
GS
DD
www.irf.com
=10V
Vgs
Id